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- 2024
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
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Mark
Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
(
- Contribution to journal › Article
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
(
- Contribution to journal › Article
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Mark
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
(
- Contribution to journal › Article
- 2023
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Mark
High-quality N-polar GaN optimization by multi-step temperature growth process
(
- Contribution to journal › Article
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Mark
Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
(
- Contribution to journal › Article
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Mark
Observations of very fast electron traps at SiC/high-κ dielectric interfaces
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- Contribution to journal › Article
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
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- Contribution to journal › Article
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Mark
The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices
2023) In Advanced Materials(
- Contribution to journal › Article
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Mark
Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
2023) In Advanced Science(
- Contribution to journal › Article